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DMN2004DWK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
20V
R DS(on) max
0.55 Ω @ V GS = 4.5V
I D
T A = +25°C
540mA
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Description
This MOSFET has been designed to minimize the on-state
resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
? Load Switch
Mechanical Data
? Case: SOT363
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Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (approximate)
ESD PROTECTED TO 2kV
SOT363
D 2
S 2
G 1
G 2
S 1
D 1
Ordering Information (Note 4)
Top View
Top View
Internal Schematic
Part Number
DMN2004DWK-7
Case
SOT363
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
NAB YM
NAB YM
NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2006
T
Jan
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN2004DWK
Document number: DS30935 Rev. 5 - 2
1 of 6
www.diodes.com
January 2014
? Diodes Incorporated
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相关PDF资料
DMN2004K-7 MOSFET N-CH 20V 540MA SOT23-3
DMN2004VK-7 MOSFET DUAL N-CHAN 20V SOT-563
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相关代理商/技术参数
DMN2004K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004K_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004K-7 功能描述:MOSFET 20V 540mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2004K-7-F 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Product specification
DMN2004TK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2004TK-7 功能描述:MOSFET 20V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2004VK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004VK_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR